In this paper, a method of Zn in the compound Hg _ ( 1 - x ) Zn _ xTe by AAS is described.
本文提出了一種用原子吸收光度法測定半導(dǎo)體化合物Hg_ ( 1-x ) Zn_xTe中鋅的組分數(shù)x值的方法.
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The Seebeck coefficient measurement analysis indicated that Bi 2 - xTe 3 + x film have N - type semiconductor characteristic.
溫差電性能測試分析表明,Bi_(2-x)Te_( 3+x )薄膜材料具有半導(dǎo)體特性,塞貝克系數(shù)不隨溫度變化.
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