Study on Polyimides Adhesive for Silicon Diode Inside Insulation Protection;
硅二極管內(nèi)層聚酰亞胺保護(hù)膠的研制
Digital calibration and compensation technologies of diode power meter;
二極管功率計(jì)的數(shù)字校準(zhǔn)補(bǔ)償技術(shù)
Twelve phase rectifier diode power consumption and simulated calculating of temperature increasing rate of junction and case;
十二相整流器二極管功耗和結(jié)殼溫升仿真計(jì)算
5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm.
基于中國(guó)科學(xué)院微電子研究所的GaAspin二極管工藝,設(shè)計(jì)、制作并測(cè)試了一種單片單刀雙擲開(kāi)關(guān)。
The model of the state of forward bias and reverse bias of PIN diodes is fabricated using RF simulation software ADS(advanced design system),and the method of optimizing the key parameter of phase shifter using the sensitivity analysis module of ADS is also discussed.
利用射頻仿真軟件ADS(Advanced Design System)構(gòu)建了PIN二極管的正反偏模型,討論了運(yùn)用ADS的靈敏度分析模塊輔助優(yōu)化移相器關(guān)鍵參數(shù)的方法,并基于該方法設(shè)計(jì)出了一種X波段四位數(shù)字移相器,其工作頻率為9。
GaAs PIN diodes with different structures are fabricated,testing data of PIN diodes with usual and improved structures are compared,and the results of analysis in theory are proved.
設(shè)計(jì)并制作了高性能GaAs微波PIN二極管。
Effect of temperature on power response of PIN diode limiter;
溫度對(duì)PIN二極管限幅器功率響應(yīng)特性的影響
Overshoot phenomena in PIN diode under EMP with fast rise time;
快上升沿電磁脈沖作用下PIN二極管中的電流過(guò)沖現(xiàn)象
Wide band GaAs PIN diode SPST switch MMIC is presented in this paper.
采用GaAs PIN二極管,完成1~26。
MOSFETs with good body diode characteristics and ruggedness are needed in manyhigh voltage switching applications.
在許多高電壓開(kāi)關(guān)應(yīng)用當(dāng)中,都需要采用具有良好特性的體二極管且耐用性強(qiáng)的MOSFET。
As the improvement of the load current,the conduction loss and reverse recovery loss of synchronous rectifier′s body-diode becomes more prominent.
低電壓大電流開(kāi)關(guān)電源大多采用基于同步整流的Buck拓?fù)?而隨著輸出電流的不斷提高,同步整流管中體二極管的導(dǎo)通損耗和反向恢復(fù)損耗越來(lái)越成為提高效率的瓶頸。
Prototype Schottky barrier diodes with high.
在此外延片上制備了高頻肖特基二極管的原型器件 ,與傳統(tǒng)的硅基肖特基二極管相比截止頻率有了大幅提
Experiments show that,diodes in the current equation m value is the forward voltage and current of the quantity of change for germanium diodes,m there is a minimum,the silicone tube,m value with positive voltage and current increases.
對(duì)二極管電流方程在實(shí)際應(yīng)用中存在的問(wèn)題進(jìn)行了分析。